Reference Only

XP3N5R0M

MOSFETs N-CH 30V 17.4 A SO-8

Manufacturer:

Mfr Part:
XP3N5R0M

TTI Part:
XP3N5R0M

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current17.4 A
Rds On - Drain-Source Resistance5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge21 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2.5 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time14 ns
Forward Transconductance - Min60 S
Moisture SensitiveYes
Product TypeMOSFETs
Rise Time11 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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