Reference Only

XP10TN135H

MOSFETs N-CH 100V 8.1 A TO-252

Manufacturer:

Mfr Part:
XP10TN135H

TTI Part:
XP10TN135H

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3/2
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current8.1 A
Rds On - Drain-Source Resistance135 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge11 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time3 ns
Forward Transconductance - Min17 S
Product TypeMOSFETs
Rise Time8 ns
SeriesXP
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Typical Turn-On Delay Time6 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

3,000In Stock

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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.116$348.00
$0.115$690.00
$0.114$1,026.00
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