Reference Only

XP10C150M

MOSFETs Complementary N ch + P ch 100V/-1

Manufacturer:

Mfr Part:
XP10C150M

TTI Part:
XP10C150M

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerYAGEO
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Transistor PolarityN-Channel, P-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current2.5 A
Rds On - Drain-Source Resistance150 mOhms, 160 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge11 nC, 32 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation2 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time7 ns, 17 ns
Forward Transconductance - Min7.5 S, 10 S
Moisture SensitiveYes
Product TypeMOSFETs
Rise Time4 ns
SeriesXP
SubcategoryTransistors
Typical Turn-Off Delay Time16 ns, 46 ns
Typical Turn-On Delay Time7 ns, 12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginTaiwan (China)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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