Reference Only

SIHP21N65EF-GE3

MOSFETs 650V Vds 30V Vgs TO-220AB.

Manufacturer:

Mfr Part:
SIHP21N65EF-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current21 A
Rds On - Drain-Source Resistance180 mOhms
Vgs - Gate-Source Voltage30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge71 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation208 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time42 ns
Product TypeMOSFETs
Rise Time34 ns
SeriesSIHP EF
SubcategoryTransistors
Typical Turn-Off Delay Time68 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

Documents

EDA / CAD Models

Not Available Online

Need this part?
We can help
Contact a Sales Representative

Tube

Pricing not available for this package type
Need pricing?