Reference Only

SIHD2N80AE-GE3

MOSFETs Nch 800V Vds 30V Vgs TO-252 (DPAK).

Manufacturer:

Mfr Part:
SIHD2N80AE-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current2.9 A
Rds On - Drain-Source Resistance2.5 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation62.5 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time23 ns
Product TypeMOSFETs
Rise Time8 ns
SeriesSIHD E
SubcategoryTransistors
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time13 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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