Reference Only

SIHB23N60E-GE3

MOSFETs 600V Vds 30V Vgs D2PAK (TO-263).

Manufacturer:

Mfr Part:
SIHB23N60E-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3 (TO-263-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current23 A
Rds On - Drain-Source Resistance158 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge63 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation227 W
Channel ModeEnhancement
PackagingBulk
ConfigurationSingle
Fall Time34 ns
Product TypeMOSFETs
Rise Time38 ns
SeriesSIHB E
SubcategoryTransistors
Typical Turn-Off Delay Time66 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption Number7a
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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(Minimum: 1,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.17$2,170.00
$2.04$4,080.00
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