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SIHB135N65S-GE3

New Product
MOSFETs .

Manufacturer:

Mfr Part:
SIHB135N65S-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD2PAK-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current27 A
Rds On - Drain-Source Resistance0.139 Ohms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge51 nC
Pd - Power Dissipation255 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time19 ns
Forward Transconductance - Min12 S
Product TypeMOSFETs
Rise Time36 ns
Seriessihb135n65s
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time60 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 21 Weeks
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(Minimum: 1,000 / Multiples: 1)
Quantity Unit PriceExt. Price
$0.95$950.00
$0.87$4,350.00
$0.85$8,500.00
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