Reference Only

MXP120A080SE-T1GE3

New Product
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET.

Manufacturer:

Mfr Part:
MXP120A080SE-T1GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseTO-263-7
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current32 A
Rds On - Drain-Source Resistance100 mOhms
Vgs - Gate-Source Voltage- 10 V, 22 V
Vgs th - Gate-Source Threshold Voltage2.9 V
Qg - Gate Charge47 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation185 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
Product TypeSiC MOSFETS
ProductSiC MOSFET
Rise Time9 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 24 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Each

(Minimum: 800 / Multiples: 1)
Quantity Unit PriceExt. Price
$4.42$3,536.00
Need more?