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MXP120A045SW-GE3

New Product
SiC MOSFETs 1200-V N-CHANNEL SIC MOSFET.

Manufacturer:

Mfr Part:
MXP120A045SW-GE3

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerVishay
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247AD-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current51 A
Rds On - Drain-Source Resistance56 mOhms
Vgs - Gate-Source Voltage- 10 V, 22 V
Vgs th - Gate-Source Threshold Voltage2.8 V
Qg - Gate Charge84 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation254 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
Product TypeSiC MOSFETS
ProductSiC MOSFET
Rise Time16 ns
SubcategoryTransistors
TechnologySiC
Transistor Type1 N-Channel
Typical Turn-Off Delay Time26 ns
Typical Turn-On Delay Time34 ns

Export and Environmental Classification

AttributeDescription
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 24 Weeks
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