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XPH4R10ANB,L1XHQ

MOSFETs PD=170W F=1MHZ AEC-Q101

Manufacturer:

Mfr Part:
XPH4R10ANB,L1XHQ

TTI Part:
XPH4R10ANBL1XHQ

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-Advance-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current70 A
Rds On - Drain-Source Resistance4.1 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge75 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation170 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
Fall Time22 ns
Product TypeMOSFETs
Rise Time21 ns
SeriesU-MOSVIII-H
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time89 ns
Typical Turn-On Delay Time52 ns

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 19 Weeks
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(Minimum: 5,000 / Multiples: 5,000)
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$0.671$3,355.00
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