Reference Only
TW060N120C,S1F
SiC MOSFETs G3 1200V SiC-MOSFET TO-247 60mohm
Datasheet
TW060N120C,S1F DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 36 A | |
| Rds On - Drain-Source Resistance | 182 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, + 25 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Qg - Gate Charge | 46 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 170 W | |
| Channel Mode | Enhancement | |
| Fall Time | 33 ns | |
| Packaging | Tube | |
| Product Type | SiC MOSFETS | |
| Rise Time | 40 ns | |
| Series | 3rd Generation | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Typical Turn-Off Delay Time | 78 ns | |
| Typical Turn-On Delay Time | 68 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | China |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Product Catalogs
30In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 30 / Multiples: 30)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $12.86 | $385.80 | |
| $12.73 | $1,527.60 | |
| $12.60 | $6,426.00 |
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