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TW015N65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247 15mohm

Manufacturer:

Mfr Part:
TW015N65C,S1F

TTI Part:
TW015N65CS1F

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance21 mOhms
Vgs - Gate-Source Voltage- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge128 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation342 W
Channel ModeEnhancement
Fall Time59 ns
PackagingTube
Product TypeSiC MOSFETS
Rise Time79 ns
Series3rd Generation
SubcategoryTransistors
TechnologySiC
Typical Turn-Off Delay Time116 ns
Typical Turn-On Delay Time117 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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