Reference Only
TRS12E65H,S1Q
SiC Schottky Diodes G3 SiC-SBD 650V 12A TO-220-2L
Datasheet
TRS12E65H,S1Q DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | SiC Schottky Diodes | |
| Mounting Style | Through Hole | |
| Package / Case | TO-220-2L | |
| If - Forward Current | 12 A | |
| Vrrm - Repetitive Reverse Voltage | 650 V | |
| Vf - Forward Voltage | 1.2 V | |
| Ifsm - Forward Surge Current | 640 A | |
| Ir - Reverse Current | 2.4 uA | |
| Packaging | Tube | |
| Pd - Power Dissipation | 107 W | |
| Product Type | SiC Schottky Diodes | |
| Subcategory | Diodes & Rectifiers |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | China |
| ECCN | EAR99 |
| HTS | 8541100080 |
| TARIC | 8541100000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Application Notes
0In Stock
Available For Backorder
Lead Time: 27 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 50 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $1.93 | $96.50 |
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