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TRS10E65H,S1Q

SiC Schottky Diodes G3 SiC-SBD 650V 10A TO-220-2L

Manufacturer:

Mfr Part:
TRS10E65H,S1Q

TTI Part:
TRS10E65HS1Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategorySiC Schottky Diodes
Mounting StyleThrough Hole
Package / CaseTO-220-2L
If - Forward Current10 A
Vrrm - Repetitive Reverse Voltage650 V
Vf - Forward Voltage1.2 V
Ifsm - Forward Surge Current510 A
Ir - Reverse Current2 uA
PackagingTube
Pd - Power Dissipation88 W
Product TypeSiC Schottky Diodes
SubcategoryDiodes & Rectifiers

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541100080
TARIC8541100000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 27 Weeks
Please adjust quantity to minimum and multiple values.
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Tube

(Minimum: 50 / Multiples: 50)
Quantity Unit PriceExt. Price
$1.70$85.00
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