Reference Only

TPW2900ENH,L1Q

MOSFETs POWER MOSFET TRANSISTOR

Manufacturer:

Mfr Part:
TPW2900ENH,L1Q

TTI Part:
TPW2900ENHL1Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDSOP-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current36 A
Rds On - Drain-Source Resistance29 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation142 W
Channel ModeEnhancement
TradenameU-MOSVIII-H
PackagingReel
ConfigurationSingle
Fall Time12 ns
Product TypeMOSFETs
Rise Time8 ns
SeriesTPW2900ENH
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
Country of OriginMalaysia
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 27 Weeks
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(Minimum: 5,000 / Multiples: 5,000)
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$1.20$6,000.00
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