Reference Only

TPN4R712MD,L1Q

MOSFETs P-Channel Mosfet 20V UMOS-VI

Manufacturer:

Mfr Part:
TPN4R712MD,L1Q

TTI Part:
TPN4R712MDL1Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSON-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current36 A
Rds On - Drain-Source Resistance4.7 mOhms
Vgs - Gate-Source Voltage- 12 V, 12 V
Vgs th - Gate-Source Threshold Voltage500 mV
Qg - Gate Charge65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation42 W
Channel ModeEnhancement
TradenameU-MOSVI
PackagingReel
ConfigurationSingle
Fall Time145 ns
Product TypeMOSFETs
Rise Time11 ns
SeriesTPN4R712MD
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time443 ns
Typical Turn-On Delay Time18 ns

Export and Environmental Classification

AttributeDescription
Country of OriginMalaysia
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 27 Weeks
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