Reference Only

TPN2R903PL,L1Q

MOSFETs POWER MOSFET TRANSISTOR

Manufacturer:

Mfr Part:
TPN2R903PL,L1Q

TTI Part:
TPN2R903PLL1Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSON-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current122 A
Rds On - Drain-Source Resistance2.9 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.1 V
Qg - Gate Charge26 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation75 W
Channel ModeEnhancement
TradenameU-MOSIX-H
PackagingReel
ConfigurationSingle
Fall Time8.2 ns
Product TypeMOSFETs
Rise Time4.7 ns
SeriesTPN2R903PL
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time12 ns

Export and Environmental Classification

AttributeDescription
Country of OriginMalaysia
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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(Minimum: 5,000 / Multiples: 5,000)
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$0.299$1,495.00
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