Reference Only

TPN11006PL,LQ

MOSFETs POWER MOSFET TRANSISTOR

Manufacturer:

Mfr Part:
TPN11006PL,LQ

TTI Part:
TPN11006PLLQ

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTSON-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current54 A
Rds On - Drain-Source Resistance11.4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge17 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation61 W
Channel ModeEnhancement
TradenameU-MOSIX-H
PackagingReel
ConfigurationSingle
Fall Time3.8 ns
Product TypeMOSFETs
Rise Time2.7 ns
SeriesTPN11006PL
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time23 ns
Typical Turn-On Delay Time16 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

6,000
On Order
6,000 expected 12-Oct-26
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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.287$861.00
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