Reference Only

TPH8R808QM,LQ

MOSFETs 80V UMOS9-H SOP-Advance(N) 8.8mohm

Manufacturer:

Mfr Part:
TPH8R808QM,LQ

TTI Part:
TPH8R808QM LQ

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V, 80 V
Id - Continuous Drain Current79 A
Rds On - Drain-Source Resistance8.8 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Qg - Gate Charge26 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation109 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time8 ns
Product TypeMOSFETs
Rise Time10 ns
SeriesUMOS9-H
SubcategoryTransistors
Typical Turn-Off Delay Time33 ns
Typical Turn-On Delay Time24 ns

Export and Environmental Classification

AttributeDescription
Country of OriginMalaysia
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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