Reference Only
TPH2R608NH,L1Q
MOSFETs Power MOSFET N-Channel Single
Datasheet
TPH2R608NH,L1Q DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | SOP-8 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 75 V | |
| Id - Continuous Drain Current | 168 A | |
| Rds On - Drain-Source Resistance | 2.6 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Qg - Gate Charge | 72 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 142 W | |
| Channel Mode | Enhancement | |
| Tradename | U-MOSVIII-H | |
| Packaging | Reel | |
| Configuration | Single | |
| Fall Time | 15 ns | |
| Product Type | MOSFETs | |
| Rise Time | 11 ns | |
| Series | TPH2R608NH | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 56 ns | |
| Typical Turn-On Delay Time | 30 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Malaysia |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Application Notes
Product Catalogs
Test/Quality Data
0In Stock
5,000
On Order
5,000 expected 19-Oct-26
Quantity
---
Unit Price
---
Ext. Price
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Reel
(Minimum: 5,000 / Multiples: 5,000)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $0.638 | $3,190.00 |
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