Reference Only

TPH2R608NH,L1Q

MOSFETs Power MOSFET N-Channel Single

Manufacturer:

Mfr Part:
TPH2R608NH,L1Q

TTI Part:
TPH2R608NHL1Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage75 V
Id - Continuous Drain Current168 A
Rds On - Drain-Source Resistance2.6 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge72 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation142 W
Channel ModeEnhancement
TradenameU-MOSVIII-H
PackagingReel
ConfigurationSingle
Fall Time15 ns
Product TypeMOSFETs
Rise Time11 ns
SeriesTPH2R608NH
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time56 ns
Typical Turn-On Delay Time30 ns

Export and Environmental Classification

AttributeDescription
Country of OriginMalaysia
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

5,000
On Order
5,000 expected 19-Oct-26
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Reel

(Minimum: 5,000 / Multiples: 5,000)
Quantity Unit PriceExt. Price
$0.638$3,190.00
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