Reference Only

TPH1R306PL,L1Q

MOSFETs POWER MOSFET TRANSISTOR

Manufacturer:

Mfr Part:
TPH1R306PL,L1Q

TTI Part:
TPH1R306PLL1Q

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOP-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current260 A
Rds On - Drain-Source Resistance1.34 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge91 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation170 W
Channel ModeEnhancement
TradenameU-MOSIX-H
PackagingReel
ConfigurationSingle
Fall Time14.7 ns
Product TypeMOSFETs
Rise Time8.3 ns
SeriesTPH1R306PL
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
Country of OriginMalaysia
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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