Reference Only

TK65E10N1,S1X

MOSFETs 100V N-Ch PWR FET 148A 192W 5400pF

Manufacturer:

Mfr Part:
TK65E10N1,S1X

TTI Part:
TK65E10N1 S1X

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current148 A
Rds On - Drain-Source Resistance4 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge81 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation192 W
Channel ModeEnhancement
TradenameU-MOSVIII-H
PackagingTube
ConfigurationSingle
Fall Time26 ns
Product TypeMOSFETs
Rise Time19 ns
SeriesTK65E10N1
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time85 ns
Typical Turn-On Delay Time44 ns

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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