Reference Only

TK110E65Z,S1X

MOSFETs 650V DTMOS VI TO-220 110MOHM

Manufacturer:

Mfr Part:
TK110E65Z,S1X

TTI Part:
TK110E65ZS1X

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current24 A
Rds On - Drain-Source Resistance92 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge40 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation190 W
Channel ModeEnhancement
PackagingTube
Fall Time4 ns
Product TypeMOSFETs
Rise Time28 ns
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 19 Weeks
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