Reference Only

TBC847B,LM

Bipolar Transistors - BJT BJT NPN 0.15A 50V

Manufacturer:

Mfr Part:
TBC847B,LM

TTI Part:
TBC847BLM

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage170 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation320 mW
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
SeriesTBC8X7
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min200
DC Current Gain hFE Max450 at 2 mA, 5 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541290095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 19 Weeks
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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.0157$47.10
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