Reference Only
SSM6N815R,LF
MOSFETs LowON Res MOSFET ID=2A VDSS=100V
Datasheet
SSM6N815R,LF DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TSOP-6 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Id - Continuous Drain Current | 2 A | |
| Rds On - Drain-Source Resistance | 84 mOhms, 84 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V | |
| Qg - Gate Charge | 3.1 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 1.4 W | |
| Channel Mode | Enhancement | |
| Tradename | U-MOSVIII-H | |
| Packaging | Reel | |
| Configuration | Dual | |
| Forward Transconductance - Min | 4.8 S, 4.8 S | |
| Product Type | MOSFETs | |
| Series | SSM6N815 | |
| Subcategory | Transistors | |
| Transistor Type | 2 N-Channel | |
| Typical Turn-Off Delay Time | 21 ns, 21 ns | |
| Typical Turn-On Delay Time | 7.5 ns, 7.5 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Thailand |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Test/Quality Data
0In Stock
Available For Backorder
Lead Time: 23 Weeks
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 3,000 / Multiples: 3,000)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $0.139 | $417.00 |
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