Reference Only
SSM6N813R,LXHF
MOSFETs AUTO AEC-Q SS MOS Dual N-ch Low drain-source on-resistance VDSS:100V ID:3.5A PD:1.5W TSOP6F
Datasheet
SSM6N813R,LXHF DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | TSOP6F | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 2 Channel | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Id - Continuous Drain Current | 3.5 A | |
| Rds On - Drain-Source Resistance | 88 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 3.6 nC | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 1.5 W | |
| Channel Mode | Enhancement | |
| Qualification | AEC-Q101 | |
| Packaging | Reel | |
| Configuration | Dual | |
| Product Type | MOSFETs | |
| Series | U-MOSVIII-H | |
| Subcategory | Transistors | |
| Typical Turn-Off Delay Time | 670 ns | |
| Typical Turn-On Delay Time | 360 ns | |
| Part # Aliases | SSM6N813R,LXHF(B |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Thailand |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Test/Quality Data
51,000In Stock
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 3,000 / Multiples: 3,000)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $0.264 | $792.00 | |
| $0.261 | $1,566.00 | |
| $0.257 | $2,313.00 | |
| $0.254 | $3,810.00 | |
| $0.25 | $7,500.00 |
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NCNR - Cannot be cancelled or returned.
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