Reference Only

RN1901,LF(CT

Bipolar Transistors - BJT Bias Resistor Built- in Transistor, 2in1

Manufacturer:

Mfr Part:
RN1901,LF(CT

TTI Part:
RN1901LF(CT

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO10 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current100 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT250 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesRN1901
PackagingReel
DC Collector/Base Gain hfe Min30
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541290095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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Lead Time: 19 Weeks
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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.0286$85.80
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