Reference Only
HN1C01FE-GR LXHF
New Product
Bipolar Transistors - BJT AUTO AEC-Q NPN + NPN Tr VCEO:50V Ic:0.15A hFE:120-400 SOT-563 (ES6)
Datasheet
HN1C01FE-GR,LXHF DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | Bipolar Transistors - BJT | |
| Mounting Style | SMD/SMT | |
| Pd - Power Dissipation | 100 mW | |
| Maximum Operating Temperature | + 150 C | |
| Package / Case | ES-6 | |
| Packaging | Reel | |
| Collector- Base Voltage VCBO | 60 V | |
| Collector-Emitter Saturation Voltage | 100 mV | |
| Collector- Emitter Voltage VCEO Max | 50 V | |
| Configuration | Single | |
| Continuous Collector Current | 150 mA | |
| DC Collector/Base Gain hfe Min | 120 at 2 mA, 6 V | |
| DC Current Gain hFE Max | 400 at 2 mA, 6 V | |
| Emitter- Base Voltage VEBO | 5 V | |
| Gain Bandwidth Product fT | 80 MHz | |
| Product Type | BJTs - Bipolar Transistors | |
| Qualification | AEC-Q200 | |
| Subcategory | Transistors | |
| Technology | Si | |
| Transistor Polarity | NPN | |
| Part # Aliases | HN1C01FE-GR,LXHF(B |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Thailand |
| ECCN | EAR99 |
| HTS | 8541210095 |
| TARIC | 8541210000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |