Reference Only

HN1B04FU-YLF

Bipolar Transistors - BJT LF Transistor +/-.15A +/-50V

Manufacturer:

Mfr Part:
HN1B04FU-Y,LF

TTI Part:
HN1B04FU-YLF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Transistor PolarityNPN, PNP
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V, 50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT150 MHz, 120 MHz
Maximum Operating Temperature+ 125 C
QualificationAEC-Q101
SeriesHN1B04FU
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max400
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541290095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 19 Weeks
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Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.0286$85.80
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