Reference Only

HN1A01FU-YLF

Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz

Manufacturer:

Mfr Part:
HN1A01FU-Y,LF

TTI Part:
HN1A01FU-YLF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseUS-6
Transistor PolarityPNP
ConfigurationDual
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 125 C
QualificationAEC-Q101
SeriesHN1A01
PackagingReel
Continuous Collector Current- 150 mA
DC Collector/Base Gain hfe Min120
DC Current Gain hFE Max400
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541290095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Lead Time: 19 Weeks
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$0.0286$85.80
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