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HN1A01FE-Y LXHF

New Product
Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)

Manufacturer:

Mfr Part:
HN1A01FE-Y,LXHF

TTI Part:
HN1A01FE-Y LXHF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
PackagingReel
Collector- Base Voltage VCBO50 V
Collector-Emitter Saturation Voltage100 mV
Collector- Emitter Voltage VCEO Max50 V
ConfigurationDual
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min120 at -2 mA, - 6 V
DC Current Gain hFE Max400 at -2 mA, - 6 V
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseES-6
Pd - Power Dissipation100 mW
Product TypeBJTs - Bipolar Transistors
QualificationAEC-Q200
SubcategoryTransistors
TechnologySi
Transistor PolarityPNP
Part # AliasesHN1A01FE-Y,LXHF(B

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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Reel

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