Reference Only

GT40QR21(STA1ED

IGBTs TO-3PN(OS) MQO=25 V=1200 IC=40

Manufacturer:

Mfr Part:
GT40QR21(STA1,E,D

TTI Part:
GT40QR21(STA1ED

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Package / CaseTO-3PN-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage1.5 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C40 A
Pd - Power Dissipation230 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesGT40QR21
PackagingTray
Continuous Collector Current Ic Max80 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginChina
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 15 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tray

(Minimum: 25 / Multiples: 25)
Quantity Unit PriceExt. Price
$3.49$87.25
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