Reference Only

GT30N135SRA,S1E

IGBTs 1350V DISCRETE IGBT TRANS

Manufacturer:

Mfr Part:
GT30N135SRA,S1E

TTI Part:
GT30N135SRAS1E

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryIGBTs
TechnologySi
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.35 kV
Collector-Emitter Saturation Voltage2.15 V
Maximum Gate Emitter Voltage- 25 V, 25 V
Continuous Collector Current at 25 C60 A
Pd - Power Dissipation348 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 27 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$2.45$73.50
Need more?

My Notes

Sign into see notes.