Reference Only

2SC5200N(S1ES)

Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ

Manufacturer:

Mfr Part:
2SC5200N(S1,E,S)

TTI Part:
2SC5200N(S1ES)

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max230 V
Collector- Base Voltage VCBO230 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage400 mV
Maximum DC Collector Current15 A
Gain Bandwidth Product fT30 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Continuous Collector Current15 A
DC Collector/Base Gain hfe Min55
DC Current Gain hFE Max160
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541290055
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

1,075In Stock

Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tube

(Minimum: 25 / Multiples: 25)
Quantity Unit PriceExt. Price
$1.64$41.00
$1.63$163.00
$1.37$685.00
$1.28$1,280.00
$1.19$2,380.00
$1.13$5,650.00
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