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2SC2712-GRLXGF(B

Bipolar Transistors - BJT S-MINI 50V .15A NPN EPITAXIAL

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Mfr Part:
2SC2712-GR,LXGF(B

TTI Part:
2SC2712-GRLXGF(B

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Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO60 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage250 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation150 mW
Gain Bandwidth Product fT80 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 125 C
PackagingReel
Continuous Collector Current150 mA
DC Collector/Base Gain hfe Min70
DC Current Gain hFE Max700
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541290095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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