Reference Only

2SA1832-GRLF

Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp

Manufacturer:

Mfr Part:
2SA1832-GR,LF

TTI Part:
2SA1832-GRLF

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-426-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current150 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO50 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
Maximum DC Collector Current150 mA
Pd - Power Dissipation100 mW
Gain Bandwidth Product fT80 MHz
Maximum Operating Temperature+ 125 C
QualificationAEC-Q101
Series2SA1832
PackagingReel
DC Collector/Base Gain hfe Min70 at - 2 mA, - 6 V
DC Current Gain hFE Max400 at - 2 mA, - 6 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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(Minimum: 3,000 / Multiples: 3,000)
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$0.0213$63.90
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