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TW123V65C,LQ

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SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.123 Ohma.18 V, DFN 8 x 8, 3rd Gen..

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Mfr Part:
TW123V65C,LQ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategorySiC MOSFETs
ProductSiC MOSFETS
Series3rd Generation
PackagingReel
Channel ModeEnhancement
ConfigurationSingle
Fall Time15 ns
Id - Continuous Drain Current18 A
Maximum Operating Temperature+ 175 C
Mounting StyleSMD/SMT
Number of Channels1 Channel
Package / CaseDFN-5
Pd - Power Dissipation76 W
Product TypeSiC MOSFETS
Qg - Gate Charge21 nC
Rds On - Drain-Source Resistance183 mOhms
Rise Time14 ns
SubcategoryTransistors
TechnologySiC
Transistor PolarityN-Channel
Transistor Type1 N-Channel
Typical Turn-Off Delay Time31 ns
Typical Turn-On Delay Time21 ns
Vds - Drain-Source Breakdown Voltage650 V
Vgs - Gate-Source Voltage- 10 V, 25 V
Vgs th - Gate-Source Threshold Voltage5 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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