Reference Only
TW092V65C,LQ
New Product
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.092 Ohma.18 V, DFN 8 x 8, 3rd Gen..
Datasheet
TW092V65C,LQ DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | SiC MOSFETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | DFN-5 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 27 A | |
| Rds On - Drain-Source Resistance | 136 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, 25 V | |
| Vgs th - Gate-Source Threshold Voltage | 5 V | |
| Qg - Gate Charge | 28 nC | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 111 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 14 ns | |
| Packaging | Reel | |
| Product Type | SiC MOSFETS | |
| Product | SiC MOSFETS | |
| Rise Time | 14 ns | |
| Series | 3rd Generation | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 28 ns | |
| Typical Turn-On Delay Time | 21 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
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Unit Price
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Ext. Price
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Reel
(Minimum: 2,500 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $16.02 | $40,050.00 |
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