Reference Only

TW083Z65C,S1F

SiC MOSFETs G3 650V SiC-MOSFET TO-247-4L 83mohm.

Manufacturer:

Mfr Part:
TW083Z65C,S1F

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategorySiC MOSFETs
Mounting StyleThrough Hole
Package / CaseTO-247-4
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current30 A
Rds On - Drain-Source Resistance83 mOhms
Vgs - Gate-Source Voltage- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge28 nC
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation111 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time14 ns
PackagingTube
Product TypeSiC MOSFETS
Rise Time14 ns
Series3rd Generation
SubcategoryTransistors
TechnologySiC
Typical Turn-Off Delay Time28 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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