Reference Only

TW070J120B,S1Q

Obsolete
SiC MOSFETs

Manufacturer:

Mfr Part:
TW070J120B,S1Q

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategorySiC MOSFETs
Channel ModeEnhancement
ConfigurationSingle
Fall Time35 ns
Id - Continuous Drain Current36 A
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Number of Channels1 Channel
PackagingTray
Package / CaseTO-3P
Pd - Power Dissipation272 W
Product TypeSiC MOSFETS
Qg - Gate Charge67 nC
Rds On - Drain-Source Resistance70 mOhms
Rise Time7 ns
SubcategoryTransistors
TechnologySiC
Transistor PolarityN-Channel
Typical Turn-Off Delay Time40 ns
Typical Turn-On Delay Time17 ns
Vds - Drain-Source Breakdown Voltage1.2 kV
Vgs - Gate-Source Voltage- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage5.8 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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