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TW031V65C,LQ

New Product
SiC MOSFETs N-ch SiC MOSFET, 650 V, 0.031 Ohma.18 V, DFN 8 x 8, 3rd Gen..

Manufacturer:

Mfr Part:
TW031V65C,LQ

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
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ManufacturerToshiba
Product CategorySiC MOSFETs
Product TypeSiC MOSFETS
Mounting StyleSMD/SMT
Series3rd Generation
PackagingReel
Channel ModeEnhancement
ConfigurationSingle
Fall Time18 ns
Id - Continuous Drain Current53 A
Maximum Operating Temperature+ 175 C
Number of Channels1 Channel
Package / CaseDFN-5
Pd - Power Dissipation156 W
ProductSiC MOSFETS
Qg - Gate Charge65 nC
Rds On - Drain-Source Resistance45 mOhms
Rise Time15 ns
SubcategoryTransistors
TechnologySiC
Transistor PolarityN-Channel
Transistor Type1 N-Channel
Typical Turn-Off Delay Time42 ns
Typical Turn-On Delay Time30 ns
Vds - Drain-Source Breakdown Voltage650 V
Vgs - Gate-Source Voltage- 10 V, 25 V
Vgs th - Gate-Source Threshold Voltage5 V

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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EDA / CAD Models

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(Minimum: 2,500 / Multiples: 1)
Quantity Unit PriceExt. Price
$31.07$77,675.00
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