TTD1409BS4X(S Toshiba

TTD1409BS4X(S

Bipolar Transistors - BJT

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TTD1409BS4X(S

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Not Assigned

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Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
Mounting StyleThrough Hole
Package / CaseTO-126N-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO160 V
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current4 A
Gain Bandwidth Product fT150 MHz
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
SeriesTTD1409B
Continuous Collector Current2 A
DC Collector/Base Gain hfe Min100
DC Current Gain hFE Max200
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
HTS8541290095
TARIC8541210000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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