Reference Only

TTA0002(Q)

Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans.

Manufacturer:

Mfr Part:
TTA0002(Q)

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleThrough Hole
Package / Case2-21F1A-3
Transistor PolarityPNP
ConfigurationSingle
Maximum DC Collector Current18 A
Collector- Emitter Voltage VCEO Max160 V
Collector- Base Voltage VCBO160 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage2 V
Maximum DC Collector Current18 A
Pd - Power Dissipation180 W
Gain Bandwidth Product fT30 MHz
Maximum Operating Temperature+ 150 C
SeriesTTA0002
PackagingTray
Continuous Collector Current- 18 A
DC Collector/Base Gain hfe Min80
DC Current Gain hFE Max160
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 16 Weeks
Please adjust quantity to minimum and multiple values.
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Unit Price
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Ext. Price
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Tray

(Minimum: 100 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.01$201.00
$1.65$825.00
$1.56$1,560.00
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