Reference Only
TK7J90E,S1E
MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN.
Datasheet
TK7J90E,S1E DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-3PN-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 900 V | |
| Id - Continuous Drain Current | 7 A | |
| Rds On - Drain-Source Resistance | 1.6 Ohms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 4 V | |
| Qg - Gate Charge | 32 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 200 W | |
| Channel Mode | Enhancement | |
| Tradename | MOSVIII | |
| Packaging | Tray | |
| Configuration | Single | |
| Fall Time | 15 ns | |
| Product Type | MOSFETs | |
| Rise Time | 20 ns | |
| Series | TK7J90E | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 85 ns | |
| Typical Turn-On Delay Time | 55 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Application Notes
Test/Quality Data
0In Stock
Available For Backorder
Lead Time: 12 Weeks
Quantity
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Unit Price
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Ext. Price
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Tray
(Minimum: 25 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $2.64 | $66.00 | |
| $1.79 | $179.00 | |
| $1.55 | $775.00 |
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