Reference Only

TK3P80ERQ(S

MOSFETs

Manufacturer:

Mfr Part:
TK3P80ERQ(S

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance4.9 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge12 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation80 W
Channel ModeEnhancement
TradenameMOSVIII
ConfigurationSingle
Fall Time22 ns
Product TypeMOSFETs
Rise Time25 ns
SeriesTK3P80E
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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