Reference Only

TK17E80W,S1X

MOSFETs N-Ch 800V 2050pF 32nC 17A 180W.

Manufacturer:

Mfr Part:
TK17E80W,S1X

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current17 A
Rds On - Drain-Source Resistance250 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge32 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation180 W
Channel ModeEnhancement
TradenameDTMOSIV
PackagingTube
ConfigurationSingle
Fall Time7 ns
Product TypeMOSFETs
Rise Time24 ns
SeriesTK17E80W
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time80 ns
Typical Turn-On Delay Time58 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 50 / Multiples: 1)
Quantity Unit PriceExt. Price
$3.67$183.50
$3.34$334.00
$2.94$1,470.00
Need more?
Contact Us