Reference Only
TK160F10N1L,LQ
MOSFETs U-MOSVIII-H 100V 160A 122nC MOSFET.
Datasheet
TK160F10N1L,LQ DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 40 ns | |
| Id - Continuous Drain Current | 160 A | |
| Maximum Operating Temperature | + 175 C | |
| Moisture Sensitive | Yes | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Packaging | Reel | |
| Package / Case | TO-220SMW-3 | |
| Pd - Power Dissipation | 375 W | |
| Product Type | MOSFETs | |
| Qg - Gate Charge | 122 nC | |
| Qualification | AEC-Q101 | |
| Rds On - Drain-Source Resistance | 2 mOhms | |
| Rise Time | 22 ns | |
| Series | TK160F10N1L | |
| Subcategory | Transistors | |
| Technology | Si | |
| Tradename | U-MOSVIII-H | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 140 ns | |
| Typical Turn-On Delay Time | 42 ns | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
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Datasheet
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Test/Quality Data
0In Stock
Available For Backorder
Lead Time: 18 Weeks
Quantity
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Unit Price
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Ext. Price
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Reel
(Minimum: 1,000 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $1.32 | $1,320.00 | |
| $1.28 | $6,400.00 |
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