Reference Only
TK12E80W,S1X
MOSFETs N-Ch 800V 1400pF 23nC 11.5A 165W.
Datasheet
TK12E80W,S1X DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Toshiba | |
| Product Category | MOSFETs | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 11 ns | |
| Id - Continuous Drain Current | 11.5 A | |
| Maximum Operating Temperature | + 150 C | |
| Minimum Operating Temperature | - 55 C | |
| Mounting Style | Through Hole | |
| Number of Channels | 1 Channel | |
| Packaging | Tube | |
| Package / Case | TO-220-3 | |
| Pd - Power Dissipation | 165 W | |
| Product Type | MOSFETs | |
| Qg - Gate Charge | 23 nC | |
| Rds On - Drain-Source Resistance | 380 mOhms | |
| Rise Time | 40 ns | |
| Series | TK12E80W | |
| Subcategory | Transistors | |
| Technology | Si | |
| Tradename | DTMOSIV | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 130 ns | |
| Typical Turn-On Delay Time | 70 ns | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
Documents
Datasheet
Application Notes
Test/Quality Data
0In Stock
Available For Backorder
Quantity
---
Unit Price
---
Ext. Price
---
Tube
(Minimum: 50 / Multiples: 1)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $3.01 | $150.50 | |
| $2.74 | $274.00 | |
| $2.31 | $1,155.00 |
Need more?