TK10E80W Toshiba

TK10E80W

MOSFETs

Manufacturer:

Mfr Part:
TK10E80W

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage800 V
Id - Continuous Drain Current9.5 A
Rds On - Drain-Source Resistance35 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge19 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation130 W
Channel ModeEnhancement
TradenameDTMOSVI
ConfigurationSingle
Fall Time10 ns
Product TypeMOSFETs
Rise Time35 ns
SeriesTK10E80W
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time120 ns
Typical Turn-On Delay Time65 ns

Export and Environmental Classification

AttributeDescription
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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