Reference Only

TK100E06N1,S1X

MOSFETs 60V N-Ch PWR FET 1.9mOhm 10V 10uA.

Manufacturer:

Mfr Part:
TK100E06N1,S1X

TTI Part:
Not Assigned

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerToshiba
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current263 A
Rds On - Drain-Source Resistance1.9 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge140 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation255 W
Channel ModeEnhancement
TradenameU-MOSVIII-H
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesTK100E06N1
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 5 Weeks
Please adjust quantity to minimum and multiple values.
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Unit Price
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Ext. Price
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Tube

(Minimum: 50 / Multiples: 1)
Quantity Unit PriceExt. Price
$2.22$111.00
$1.95$195.00
$1.64$820.00
$1.58$1,580.00
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